Semiconductor device and manufacturing method thereof
AssigneeUnited Microelectronics Corp.
InventorsChing-Ling Lin, Chih-Sen Huang, Yi-Wen Chen
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Abstract
The semiconductor device includes a gate electrode, a first interlayer dielectric, a first mask layer, a second mask layer and a second interlayer dielectric. The first interlayer dielectric surrounds the periphery of the gate electrode, and the first mask layer is disposed on the gate electrode. The first mask layer and the gate electrode have at least one same metal component. The second mask layer is disposed on the sidewalls of the first mask layer, and the second interlayer dielectric is disposed on the second mask layer and in direct contact with the first interlayer dielectric.
Claims18
A semiconductor device, comprising:
- a gate electrode, disposed on a substrate;
- a first interlayer dielectric, surrounding a periphery of the gate electrode;
- a first mask layer, disposed on the gate electrode, wherein the first mask layer and the gate electrode have at least one same metal component;
- a second mask layer, disposed on sidewalls of the first mask layer;
- and
- a second interlayer dielectric, disposed on the second mask layer and in direct contact with the first interlayer dielectric.
A method for fabricating a semiconductor device, comprising:
- forming a gate electrode on a substrate, wherein the gate electrode is surrounded by a first interlayer dielectric;
- oxidizing top portions of the gate electrode so as to form a first mask layer;
- conformally depositing a dielectric layer covering the first mask layer and the first interlayer dielectric;
- and
- etching the dielectric layer so as to form a second mask layer, wherein portions of the first mask layer are exposed from the second mask layer.
Dependencies are inferred from the claim text.