Double gate type thin film transistor and organic light emitting diode display including the same
AssigneeLG Display Co., Ltd.
InventorsWoo-Cheol Jeong, Sung-Jun Yun, Ju-Hee Son
Life of this patent
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Abstract
A double gate type thin film transistor includes a first electrode on a substrate; a gate insulating layer on the first gate electrode; a semiconductor layer on the gate insulating layer corresponding to the first gate electrode; an etch stop layer on the semiconductor layer; source and drain electrodes contacting both sides of the semiconductor layer, respectively, and spaced apart from each other on the etch stop layer; a passivation layer on the source and drain electrode; and a second gate electrode on the passivation layer and having a double-layered structure of a transparent electrode and an opaque electrode.
Claims9
A double gate type thin film transistor comprising:
- a first gate electrode on a substrate;
- a gate insulating layer on the first gate electrode;
- a semiconductor layer on the gate insulating layer corresponding to the first gate electrode;
- an etch stop layer on the semiconductor layer;
- source and drain electrodes contacting both sides of the semiconductor layer, respectively, and spaced apart from each other on the etch stop layer;
- a passivation layer on the source and drain electrode;
- and
- a second gate electrode on the passivation layer and having a double-layered structure of a transparent electrode and an opaque electrode,
- wherein the first gate electrode is electrically connected to the second gate electrode.
An organic light emitting diode display comprising:
- a first gate electrode on a substrate;
- a gate insulating layer on the first gate electrode;
- a semiconductor layer on the gate insulating layer corresponding to the first gate electrode;
- an etch stop layer on the semiconductor layer;
- source and drain electrodes contacting both sides of the semiconductor layer, respectively, and spaced apart from each other on the etch stop layer;
- a passivation layer on the source and drain electrode;
- a second gate electrode on the passivation layer and having a double-layered structure of a transparent electrode and an opaque electrode;
- a first electrode on the passivation layer and connected to the drain electrode;
- a bank layer on the first electrode and having an opening exposing a portion the first electrode;
- a light emitting layer in the opening of the bank layer;
- and
- a second electrode on the light emitting layer, wherein the second electrode is different from the second gate electrode.
A method of manufacturing a double gate type thin film transistor, the method comprising:
- forming a first gate electrode on a substrate;
- forming a gate insulating layer on the first gate electrode;
- forming a semiconductor layer on the gate insulating layer corresponding to the first gate electrode;
- forming an etch stop layer on the semiconductor layer;
- forming source and drain electrodes contacting both sides of the semiconductor layer, respectively, and spaced apart from each other on the etch stop layer;
- forming a passivation layer on the source and drain electrode;
- and
- forming a second gate electrode on the passivation layer corresponding to the first gate electrode and having a double-layered structure of a transparent electrode and an opaque electrode,
- wherein the first gate electrode is electrically connected to the second gate electrode.
Dependencies are inferred from the claim text.