Semiconductor device and manufacturing method thereof
AssigneeFujitsu Limited
InventorsYuichi Minoura, Naoya Okamoto
Life of this patent
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Abstract
A semiconductor device includes a first semiconductor layer formed of a nitride semiconductor on a substrate, a second semiconductor layer formed of a nitride semiconductor on the first semiconductor layer, a gate trench formed in the second semiconductor layer or in the second and first semiconductor layers, a gate electrode formed at the gate trench, and a source electrode and a drain electrode formed on the second semiconductor layer. The gate trench has terminal parts of a bottom of the gate trench formed shallower than a center part of the bottom. A part of a sidewall of the gate trench is formed of a surface including an a-plane. The center part of the bottom is a c-plane. The terminal parts of the bottom form a slope from the c-plane to the a-plane.
Claims6
A semiconductor device comprising:
- a first semiconductor layer made of a nitride semiconductor and formed on a substrate;
- a second semiconductor layer made of a nitride semiconductor and formed on the first semiconductor layer;
- a gate trench formed in the second semiconductor layer or in the second semiconductor layer and the first semiconductor layer;
- a gate electrode formed at the gate trench;
- and
- a source electrode and a drain electrode formed on the second semiconductor layer,
- wherein a depth of the gate trench to a bottom of the gate trench is shallower at terminal parts than at a center part of the bottom of the gate trench,
- wherein a sidewall of the gate trench is formed by an a-plane,
- wherein the center part of the bottom of the gate trench is formed by a c-plane, and
- wherein the terminal parts of the bottom of the gate trench form a slope from the c-plane to the a-plane.
Dependencies are inferred from the claim text.