Semiconductor device with multiple space-charge control electrodes

A circuit comprising:

• a semiconductor device including:
• a semiconductor structure including:
• a substrate;
• a barrier layer;
• an active layer located between the substrate and the barrier layer;
• a channel formed at a junction of the active layer and the barrier layer;
• and a buffer layer located between the substrate and the active layer, wherein a conductivity type of the buffer layer is opposite a conductivity type of the channel;
• a first terminal and a second terminal, wherein the first terminal and the second terminal are both located on a first side of the active layer;
• and
• a plurality of space-charge control electrodes spaced entirely between the first terminal and the second terminal on a surface of the semiconductor structure, wherein an individual bias voltage is applied to each of the plurality of space-charge control electrodes, wherein the bias voltage for each of the plurality of space-charge control electrodes is configured to deplete a region of the channel under the corresponding space-charge control electrode at an operating voltage applied to the second terminal.

A circuit comprising:

• a group III nitride-based transistor including:
• a semiconductor structure including:
• a substrate;
• a barrier layer;
• an active layer located between the substrate and the barrier layer;
• a buffer layer located between the active layer and the substrate;
• and a channel formed at a junction of the active layer and the barrier layer;
• a gate and a drain, wherein the gate and the drain are both located on a first side of the active layer;
• and
• a plurality of space-charge control electrodes spaced entirely between the gate and the drain on a surface of the semiconductor structure, wherein an individual bias voltage is applied to each of the plurality of space-charge control electrodes, wherein the bias voltage for each of the plurality of space-charge control electrodes is selected based on a bias voltage of the gate, a bias voltage of the drain, and a location of the space-charge control electrode relative to the gate and the drain.