High-resistive silicon substrate with a reduced radio frequency loss for a radio-frequency integrated passive device
AssigneeOkmetic Oyj
InventorAtte Haapalinna
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Abstract
The application relates to a high-resistivity silicon substrate (100) with a reduced radio frequency loss for a radio frequency integrated passive device. The substrate comprising a bulk zone (110) comprising high-resistivity bulk silicon and a preserved sub-surface lattice damage zone (120b) comprising fractured silicon above the bulk zone. The lattice damage zone is processed into the substrate and the preserved lattice damage zone is configured to achieve the RF loss reduction of the substrate by suppressing a parasitic surface conduction.
Claims10
A high-resistivity silicon substrate (100) with a reduced radio frequency (RF) loss for a radio frequency integrated passive device, the substrate comprising:
- a bulk zone (110) comprising high-resistivity bulk silicon;
- and
- a preserved sub-surface lattice damage zone (120b), which is processed into a front surface (122) of the substrate,
- wherein the lattice damage zone forms the front surface,
- wherein the front surface is a chemical-mechanical planarization-polished front surface,
- wherein the lattice damage zone comprises fractured silicon above the bulk zone, and
- wherein the lattice damage zone suppresses a parasitic surface conduction to achieve the RF loss reduction of the substrate.
Dependencies are inferred from the claim text.