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US 9,312,344 B2Granted
Methods for forming semiconductor materials in STI trenches
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMartin Christopher Holland, Georgios Vellianitis
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Abstract
A method includes annealing a silicon region in an environment including hydrogen (H2) and hydrogen chloride (HCl) as process gases. After the step of annealing, a semiconductor region is grown from a surface of the silicon region.
Claims19
A method comprising:
- annealing a silicon region in an environment comprising hydrogen (H2) and hydrogen chloride (HCl) as process gases, wherein after annealing the silicon region comprises a multi-step surface;
- forming Shallow Trench Isolation (STI) regions in a silicon substrate;
- recessing a portion of the silicon substrate between two portions of the STI regions to form a recess, wherein the surface of the silicon region is exposed to the recess, and wherein the semiconductor region is grown from the recess;
- and
- after the step of annealing, growing a semiconductor region from a surface of the silicon region.
2 more elements
A method comprising:
- annealing a wafer comprising a silicon region at a temperature lower than 800° C., wherein before the step of annealing, the silicon region comprises a surface comprising single steps, and wherein the single steps are converted to double steps by the step of annealing;
- and
- after the step of annealing, growing a compound semiconductor region from the surface of the silicon region.
A method comprising:
- forming Shallow Trench Isolation (STI) regions in a silicon substrate;
- recessing a portion of the silicon substrate between two portions of the STI regions to form a recess;
- after the step of recessing, annealing the silicon substrate in an environment comprising hydrogen (H2) and hydrogen chloride (HCl) as process gases, wherein the annealing is performed at a temperature lower than about 870° C.;
- after the step of annealing, growing a compound semiconductor region from a surface of the silicon substrate, wherein the surface of the silicon substrate is in the recess and wherein the surface of the silicon substrate comprises a multi-step surface;
- recessing the STI regions, wherein a portion of the compound semiconductor region over top surfaces of remaining portions of the STI regions forms a semiconductor fin;
- forming a gate dielectric on sidewalls and a top surface of the semiconductor fin;
- and
- forming a gate electrode over the gate dielectric, wherein the gate dielectric and the gate electrode form portions of a Fin Field-Effect Transistor (FinFET).
5 more elements
Dependencies are inferred from the claim text.