Generation of highly N-type, defect passivated transition metal oxides using plasma fluorine insertion
AssigneeThe Regents of the University of California
InventorsL. Robert Baker, Hyungtak Seo, Antoine Hervier, Gabor A. Somorjai
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Abstract
A new composition of matter is disclosed wherein oxygen vacancies in a semiconducting transition metal oxide such as titanium dioxide are filled with a halogen such as Fluorine, whereby the conductivity of the composition is greatly enhanced, while at the same time the chemical stability of the composition is greatly improved. Stoichiometric titanium dioxide having less than 3 % oxygen vacancies is subject to fluorine insertion such that oxygen vacancies are filled, limited amounts of fluorine replace additional oxygen atoms and fluorine interstitially inserts into the body of the TiO2 composition.
Claims21
A composition of matter comprising:
- a transition metal oxide, the transition metal oxide including oxygen vacancies;
- a halogen, halogen atoms filling the oxygen vacancies and passivating the transition metal oxide;
- and
- a metal catalyst disposed on the transition metal oxide in the form of a layer of material, the layer of material being discontinuous such that at least some of the transition metal oxide is exposed.
A composition of matter comprising:
- a transition metal oxide, the transition metal oxide including less than 3% oxygen vacancies;
- a halogen, halogen atoms filling the oxygen vacancies and passivating the transition metal oxide;
- and
- a metal catalyst disposed on the transition metal oxide.
A composition of matter comprising:
- a transition metal oxide, the transition metal oxide including oxygen vacancies;
- a halogen, halogen atoms filling the oxygen vacancies and passivating the transition metal oxide;
- and
- a metal catalyst disposed on the transition metal oxide in the form of a layer of material, the layer of material being about 0.5 nanometers thick.
Dependencies are inferred from the claim text.