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US 9,312,338 B2Granted
Semiconductor device containing chalcogen atoms and method of manufacturing
AssigneeInfineon Technologies AG
InventorGerhard Schmidt
Life of this patent
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Abstract
A semiconductor device includes a single crystalline semiconductor body with a first surface and a second surface parallel to the first surface. The semiconductor body contains chalcogen atoms and a background doping of pnictogen and/or hydrogen atoms. A concentration of the chalcogen atoms is at least 1E12 cm−3. A ratio of the chalcogen atoms to the atoms of the background doping is in a range from 1:9 to 9:1.
Claims18
A semiconductor device, comprising:
- a single-crystalline semiconductor body with a first surface and a second surface parallel to the first surface, the semiconductor body containing chalcogen atoms and a background doping of pnictogen atoms, wherein a concentration of the chalcogen atoms is at least 1E12 cm−3 and a ratio of the chalcogen atoms to the pnictogen atoms of the background doping is in a range from 1:9 to 9:1 and
- wherein the semiconductor body comprises a drift zone extending parallel to the first surface and spaced from both the first and second surface, wherein an effective dopant concentration in the drift zone is defined by the chalcogen atoms and the background doping of pnictogen atoms in the semiconductor body.
A method of manufacturing a semiconductor device, the method comprising:
- implanting, from a front side, chalcogen atoms into a single crystalline semiconductor wafer containing uniformly distributed pnictogen atoms, wherein in the semiconductor wafer a ratio of the chalcogen atoms to the pnictogen atoms is in a range from 1:9 to 9:1.
A semiconductor device, comprising:
- a single-crystalline semiconductor body with a first surface and a second surface parallel to the first surface, the semiconductor body containing chalcogen atoms and a background doping of pnictogen and/or hydrogen atoms, wherein a concentration of the chalcogen atoms is at least 1E12cm−3 and a ratio of the chalcogen atoms to the atoms of the background doping is in a range from 1:9 to 9:1, and
- wherein the semiconductor body comprises a drift zone extending parallel to the first surface and spaced from both the first and second surface, wherein an effective dopant concentration in the drift zone is defined by the chalcogen atoms and the background doping of pnictogen atoms in the semiconductor body.
Dependencies are inferred from the claim text.