MOSFET device with reduced breakdown voltage
AssigneeAlpha and Omega Semiconductor Incorporated
InventorsJi Pan, Anup Bhalla
Life of this patent
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Abstract
A semiconductor device includes a drain region, an epitaxial layer overlaying the drain region, and an active region. The active region includes: a body disposed in the epitaxial layer; a source embedded in the body; a gate trench extending into the epitaxial layer; a gate disposed in the gate trench; a contact trench extending through the source and at least part of the body; a contact electrode disposed in the contact trench; and an implant disposed at least in part along a contact trench wall; and an epitaxial enhancement portion disposed below the contact trench and in contact with the implant.
Claims12
A semiconductor device, comprising:
- a drain region;
- an epitaxial layer overlaying the drain region;
- and
- an active region comprising:
- a body disposed in the epitaxial layer;
- a source embedded in the body;
- a gate trench extending into the epitaxial layer;
- a gate disposed in the gate trench;
- a contact trench extending through the source and at least part of the body;
- a contact electrode disposed in the contact trench;
- an implant disposed at least in part along a bottom portion of the contact trench, the implant having opposite carrier type as the epitaxial layer;
- and
- an epitaxial enhancement portion formed below the implant and interfacing the implant.
Dependencies are inferred from the claim text.