Back to results
US 9,312,333 B2Granted
Resonator having terminals and a method for manufacturing the resonator
AssigneesSamsung Electronics Co., Ltd., Korea University Industrial & Academic Collaboration Foundation
InventorsIn Sang Song, Sung Woo Hwang, Yun Kwon Park, Byeong Kwon Ju, Jae Sung Rieh, Jea Shik Shin, Hee Tae Kim
Life of this patent
Estimating the term…
Abstract
A resonator and a method for manufacturing a resonator are provided. The method may include doping a wafer, and forming on the wafer a substrate, a drain electrode, a source electrode, a gate electrode, and at least one nanowire.
Claims21
A method for manufacturing a resonator, the method comprising:
- doping a wafer;
- forming on the wafer a substrate, a drain electrode, a source electrode, a gate electrode, and at least one nanowire;
- and
- forming a first portion of the at least one nanowire to be of one dope type region and a second portion of the at least one nanowire to be another dope type region,
- wherein the second portion comprises a remaining part of the at least one nanowire exclusive of the first portion,
- wherein the first portion and the second portion are placed between the drain electrode and the source electrode, and
- wherein each of the first portion and the second portion comprises half of the at least one nanowire.
4 more elements
Dependencies are inferred from the claim text.