Semiconductor device
AssigneeRenesas Electronics Corporation
InventorsKen Ozawa, Hiroyuki Kunishima
Life of this patent
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Abstract
A semiconductor device having a capacitor which includes a first electrode electrically coupled to a transistor and a second electrode separate from the first electrode and covered with an interlayer insulating film, in which a plurality of coupling holes are formed in the interlayer insulating film and are in contact with the second electrode at the lower ends; and, when the capacitance of the second electrode is represented by C [nF] and the total area of the lower ends of the coupling holes is represented by A [μm2], the following expression (1) is satisfied. C/A≦1.98 [nF/μm2] (1) The elution of the second electrode constituting the capacitor at the lower ends of the coupling holes is suppressed.
Claims6
A semiconductor device comprising:
- a substrate;
- a transistor which is formed over the substrate;
- a capacitor which is electrically coupled to the transistor and includes a first electrode electrically coupled to the transistor, a second electrode separate from the first electrode, and a capacitance insulating film situated between the first electrode and the second electrode;
- an insulating cover film which covers the second electrode;
- a plurality of coupling holes which are formed in the insulating cover film and whose lower ends are each in contact with the second electrode;
- and
- vias which are embedded in the coupling holes,
- wherein, when the capacitance of the second electrode is represented by C [nF] and the total area of the lower ends of the coupling holes is represented by A [μm2], the following expression (1) is satisfied
- C/A≦1.98 [nF/μm2]. (1)
Dependencies are inferred from the claim text.