Semiconductor metal insulator metal capacitor device and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShean-Ren Horng, Kuo-Nan Hou, Feng-Liang Lai
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Abstract
A method for forming a semiconductor device includes forming a capacitor bottom plate and a metal interconnect feature on a substrate. A dielectric layer having a predetermined thickness is then formed. The dielectric layer has a first portion overlying the capacitor bottom plate and a second portion overlying the metal interconnect feature. A thickness of the first portion of the dielectric layer is adjusted by either reducing the thickness or depositing additional dielectric material. A capacitor top plate is formed over the first portion of the dielectric layer.
Claims20
A method for forming a metal-insulator-metal (MIM) capacitor, comprising:
- forming a capacitor bottom plate and a metal interconnect feature on a substrate, both the capacitor bottom plate and the metal interconnect feature being located in a single plane that is parallel with a major surface of the substrate;
- forming a first dielectric layer to a predetermined thickness, the first dielectric layer having a first portion overlying the capacitor bottom plate and having a second portion overlying the metal interconnect feature;
- forming a mask over the first dielectric layer, the mask having an opening over the first portion of the first dielectric layer;
- reducing a thickness of the first portion of the first dielectric layer without reducing a thickness of the second portion, the reducing using the mask to protect the second portion;
- forming a capacitor top plate directly over and immediately adjacent the first portion of the first dielectric layer, wherein a region between the capacitor top plate and the capacitor bottom plate is filled by only the first dielectric layer;
- and
- after forming the capacitor, removing the mask.
A method of forming an integrated circuit comprising:
- forming a first metal layer over a substrate, the first metal layer including a capacitor bottom plate and an interconnect feature;
- forming a dielectric layer of substantially uniform thickness over and in contact with the first metal layer;
- forming a capacitor top plate over the capacitor bottom plate after the forming the dielectric layer;
- and
- depositing additional dielectric material over the capacitor top plate and in physical contact with the dielectric layer.
A method of manufacturing a semiconductor device, the method comprising:
- forming a capacitor bottom plate and an interconnect within a single layer of first dielectric material;
- depositing a second dielectric material over the single layer of dielectric material, wherein the second dielectric material extends over both the capacitor bottom plate and the interconnect;
- forming a capacitor top plate at least partially into the second dielectric material, wherein the capacitor top plate extends further from the capacitor bottom plate than the second dielectric material;
- and
- depositing a third dielectric material over the capacitor top plate, the third dielectric material extending along the sidewalls of the capacitor top plate.
Dependencies are inferred from the claim text.