Light emitting device having insulator between pixel electrodes and auxiliary wiring in contact with the insulator

A semiconductor device comprising:

• a semiconductor layer over an insulating surface;
• a conductive layer electrically connected to the semiconductor layer;
• a first insulating layer over the conductive layer;
• a pixel electrode on the first insulating layer, the pixel electrode electrically connected to the conductive layer through a contact hole in the first insulating layer;
• a second insulating layer over the first insulating layer, the second insulating layer overlapping an end portion of the pixel electrode;
• an EL layer over the pixel electrode;
• a second electrode over the EL layer;
• an auxiliary wiring between the first insulating layer and the second electrode;
• a light-shielding layer over the second electrode,
• wherein the auxiliary wiring is in contact with the second insulating layer,
• wherein the EL layer does not overlap the pixel electrode in a region,
• wherein the auxiliary wiring is in contact with the second electrode in the region,
• wherein the second insulating layer includes a tapered side surface, and
• wherein the light-shielding layer overlaps the auxiliary wiring.

A semiconductor device comprising:

• a semiconductor layer over an insulating surface;
• a first conductive layer electrically connected to the semiconductor layer;
• a first insulating layer over the first conductive layer;
• a pixel electrode on the first insulating layer, the pixel electrode electrically connected to the first conductive layer through a contact hole in the first insulating layer;
• a second insulating layer over the first insulating layer, the second insulating layer overlapping an end portion of the pixel electrode;
• an EL layer over the pixel electrode;
• a second electrode over the EL layer;
• a second conductive layer between the first insulating layer and the second electrode;
• and
• a light-shielding layer over the second electrode,
• wherein the second conductive layer is in contact with the second insulating layer,
• wherein the EL layer does not overlap the pixel electrode in a region,
• wherein the second conductive layer is in contact with the second electrode in the region, and
• wherein the light-shielding layer overlaps the second conductive layer.

A semiconductor device comprising:

• a transistor over a first substrate;
• a first conductive layer electrically connected to the transistor;
• a first organic insulating layer over the first conductive layer;
• a pixel electrode over the first organic insulating layer, the pixel electrode electrically connected to the first conductive layer through a contact hole in the first organic insulating layer;
• a second organic insulating layer covering an end portion of the pixel electrode;
• an EL layer over the pixel electrode and the second organic insulating layer;
• a second electrode over the EL layer;
• a first inorganic insulating layer comprising silicon nitride over the second electrode;
• and
• a color filter and a light-shielding layer over the first inorganic insulating layer,
• wherein part of the light-shielding layer overlaps with the contact hole,
• wherein the light-shielding layer overlaps with a third electrode,
• wherein the third electrode and the second organic insulating layer overlap with each other,
• wherein the third electrode is connected to the second electrode, and
• wherein the third electrode is below the second electrode.