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US 9,312,301 B2Granted
Imaging element and method of manufacturing the same
AssigneeSony Corporation
InventorTakeshi Takeda
Life of this patent
Estimating the term…
Abstract
A solid-state image sensor including a substrate having a photoelectric conversion element disposed therein, the photoelectric conversion element converting an amount of incident light into a charge amount, a memory unit disposed at a side of the photoelectric conversion element, the memory unit receiving the charge amount from the photoelectric conversion element, a first light-shielding section formed at a first side of the memory unit and disposed between the charge accumulation region and the photoelectric conversion element, and a second light-shielding section formed at a second side of the memory unit such that the second side is opposite the first side.
Claims15
A solid-state image sensor comprising:
- a substrate having a photoelectric conversion element disposed therein, the photoelectric conversion element converting an amount of incident light into a charge amount;
- a memory unit disposed at a side of the photoelectric conversion element, the memory unit receiving the charge amount from the photoelectric conversion element;
- a first light-shielding section formed at a first side of the memory unit and disposed between the memory unit and the photoelectric conversion element;
- a second light-shielding section formed at a second side of the memory unit such that the second side is opposite the first side;
- and
- a third light light-shielding section formed at a back surface of the substrate, wherein a size of the third light-shielding, section is formed to be substantially equal to a gap between the first light-shielding section and the second light-shielding section.
3 more elements
An electronic apparatus including:
- an optical unit;
- and
- a solid-state imaging device comprising unit pixels arranged in a 2-dimensional matrix, wherein each unit pixel comprises:
- a substrate having a photoelectric conversion element disposed therein, the photoelectric conversion element converting an amount of incident light into a charge;
- a memory unit disposed at a side of the photoelectric conversion element, the memory unit receiving the charge from the photoelectric conversion element;
- a first light-shielding section formed at a first side of the memory unit and disposed between the memory unit and the photoelectric conversion element;
- a second light-shielding section formed at a second side of the memory unit such that the second side is opposite the first side;
- a floating gate;
- a floating diffusion region;
- and
- a reset gate, wherein each of the floating gate, the floating diffusion region, and the reset rate are disposed between the first light shielding section and the second light shielding section.
8 more elements
An electronic apparatus including:
- an optical unit;
- and
- a solid-state imaging device comprising unit pixels arranged in a 2-dimensional matrix, wherein each unit pixel comprises:
- a substrate having a photoelectric conversion element disposed therein, the photoelectric conversion element converting an amount of incident light into a charge;
- a memory unit disposed at a side of the photoelectric conversion element, the memory unit receiving the charge from the photoelectric conversion element;
- a first light-shielding section formed at a first side of the memory unit and disposed between the memory unit and the photoelectric conversion element;
- a second light-shielding section formed at a second side of the memory unit such that the second side is opposite the first side;
- and
- a third light light-shielding section formed at a back surface of the unit pixel, wherein the third light-shielding section is formed to be substantially equal to a gap between the first light-shielding section and the second light-shielding section.
6 more elements
An electronic apparatus including:
- an optical unit;
- and
- a solid-state imaging device comprising unit pixels arranged in a 2-dimensional matrix, wherein each unit pixel comprises:
- a substrate having a photoelectric conversion element disposed therein, the photoelectric conversion element converting an amount of incident light into a charge;
- a memory unit disposed at a side of the photoelectric conversion element, the memory unit receiving the charge from the photoelectric conversion element;
- a first light-shielding section formed at a first side of the memo unit and disposed between the memory unit and the photoelectric conversion element;
- and
- a second light-shielding section formed at a second side of the memory unit such that the second side is opposite the first side, wherein at least a portion of the first light-shielding section and the second light-shielding section are formed such that they extend downward from an upper substrate surface and penetrate substantially halfway through the substrate in a depth direction.
5 more elements
Dependencies are inferred from the claim text.