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US 9,312,300 B2Granted
Solid-state imaging device, method of manufacturing the same, and electronic apparatus
AssigneeSony Corporation
InventorsKeiji Mabuchi, Hideshi Abe, Hideo Kanbe, Shiro Uchida
Life of this patent
Estimating the term…
Abstract
A solid-state imaging device includes an Si substrate in which a photoelectric conversion unit that photoelectrically converts visible light incident from a back surface side is formed, and a lower substrate provided under the Si substrate and configured to photoelectrically convert infrared light incident from the back surface side.
Claims15
A solid-state imaging device comprising:
- an Si substrate in which a photoelectric conversion unit that photoelectrically converts visible light incident from a back surface side is formed;
- and
- a lower substrate provided under the Si substrate and configured to photoelectrically convert infrared light incident from the back surface side, wherein an infrared electrode comes in contact with the Si substrate side of the lower substrate, and a lower electrode comes in contact with an outer side of the lower substrate, wherein the Si substrate and the lower substrate form a laminated structure, and wherein a visible light reading circuit configured to read the visible light is formed in a first wiring layer and the Si substrate, and an infrared light reading circuit configured to read the infrared light is formed in the lower substrate.
An electronic apparatus comprising:
- a solid-state imaging device including an Si substrate in which a photoelectric conversion unit that photoelectrically converts visible light incident from a back surface side is formed, and a lower substrate provided under the Si substrate and configured to photoelectrically convert infrared light incident from the back surface side, wherein an infrared electrode comes in contact with the Si substrate side of the lower substrate, and a lower electrode comes in contact with an outer side of the lower substrate, and wherein a visible light reading circuit configured to read the visible light and an infrared light reading circuit configured to read the infrared light are formed in the Si substrate;
- a signal processing circuit configured to process an output signal output from the solid-state imaging device;
- and
- an optical system configured to cause the visible light and the infrared light to be incident on the solid-state imaging device.
1 more element
Dependencies are inferred from the claim text.