Image sensor with dielectric charge trapping device

An image sensor comprising:

• a complementary metal-oxide-semiconductor (“CMOS”) array of image sensor pixels, wherein each of the image sensor pixels includes:
• a photosensitive element disposed in a semiconductor layer of the image sensor to receive electromagnetic radiation of a first type along a vertical axis;
• a floating diffusion region disposed in the semiconductor layer;
• a transfer gate disposed on the semiconductor layer between the photosensitive element and the floating diffusion region to control a flow of charge produced in the photosensitive element to the floating diffusion region;
• a dielectric charge trapping device disposed on the semiconductor layer to receive electromagnetic radiation of a second type along the vertical axis and to trap charges in response to the electromagnetic radiation of the second type, wherein the dielectric charge trapping device is further configured to induce charge in the photosensitive element in response to the trapped charges;
• a first metal contact coupled to the dielectric charge trapping device to provide a first bias voltage to the dielectric charge trapping device;
• and
• a light source coupled to emit an optical erase signal along the vertical axis to erase charge trapped in each dielectric charge trapping device, wherein the light source comprises:
• a light emitting diode;
• and
• a waveguide optically coupled to the light emitting diode and configured to emit the optical erase signal along the vertical axis.