Solid-state imaging device with a signal storing portion including first and second semiconductor regions

A solid-state imaging device comprising:

• a plurality of pixels arranged on a semiconductor substrate, the plurality of pixels each including a signal storage portion;
• and
• a DTI (Deep Trench Isolation) type element isolation portion that electrically separates the plurality of pixels on the semiconductor substrate from each other, wherein
• the signal storage portion in each of the plurality of pixels includes
• a first semiconductor region of a first conductive type, the first semiconductor region covering a side wall of the element isolation portion on a side of the signal storage portion, and
• a second semiconductor region of a second conductive type, the second conductive type being an opposite conductive type to the first conductive type, the second semiconductor region being arranged vertically in a depth direction from a deeper position than a front surface in the semiconductor substrate and extending in a plate shape along the first semiconductor region, the second semiconductor region having a substantially U-shape when seen through from a direction perpendicular to the front surface of the semiconductor substrate.

A solid-state imaging device comprising:

• a plurality of pixels arranged on a semiconductor substrate, the plurality of pixels each including a signal storage portion;
• and
• a DTI (Deep Trench Isolation) type element isolation portion that electrically separates the plurality of pixels on the semiconductor substrate from each other, wherein
• the signal storage portion in each of the plurality of pixels includes
• a first semiconductor region of a first conductive type, the first semiconductor region covering a side wall of the element isolation portion on a side of the signal storage portion, and
• a second semiconductor region of a second conductive type, the second conductive type being an opposite conductive type to the first conductive type, the second semiconductor region being arranged vertically in a depth direction from a deeper position than a front surface in the semiconductor substrate and extending in a plate shape along the first semiconductor region, the second semiconductor region having a substantially O-shape when seen through from a direction perpendicular to the front surface of the semiconductor substrate.

A solid-state imaging device comprising:

• a plurality of pixels arranged on a semiconductor substrate, the plurality of pixels each including a signal storage portion;
• and
• a DTI (Deep Trench Isolation) type element isolation portion that electrically separates the plurality of pixels on the semiconductor substrate from each other, wherein
• the signal storage portion in each of the plurality of pixels includes
• a first semiconductor region of a first conductive type, the first semiconductor region covering a side wall of the element isolation portion on a side of the signal storage portion, and
• a second semiconductor region of a second conductive type, the second conductive type being an opposite conductive type to the first conductive type, the second semiconductor region being arranged vertically in a depth direction from a deeper position than a front surface in the semiconductor substrate and extending in a plate shape along the first semiconductor region,
• wherein the plurality of pixels includes a first pixel and a second pixel adjacent to the first pixel,
• each of the first and second pixels has a charge-voltage conversion portion that converts charges of the signal storage portion into a voltage,
• the charge-voltage conversion portion placed in the first pixel and the charge-voltage conversion portion placed in the second pixel are electrically connected to each other and function as a single charge-voltage conversion element shared between the first and second pixels,
• the first pixel has a reset portion placed in the first pixel, the reset portion being shared between the first and second pixels in such a manner as to reset the voltage of the charge-voltage conversion element, and
• the second pixel has an amplifying portion placed in the second pixel, the amplifying portion being shared between the first and second pixels in such a manner as to output, to a signal line, a signal corresponding to the voltage of the charge-voltage conversion element
• and wherein the plurality of pixels includes the first pixel and a plurality of the second pixels, and
• the plurality of second pixels includes amplifying portion group divided and placed in each of the plurality of the second pixels, the amplifying portion group being shared between the first pixel and the plurality of second pixels in such a manner as to output, to the signal line, a signal corresponding to the voltage of the charge-voltage conversion element.