Solid-state imaging device and method for manufacturing solid-state imaging device
AssigneeKabushiki Kaisha Toshiba
InventorsHisayuki Taruki, Nagataka Tanaka
Life of this patent
Estimating the term…
Abstract
A solid-state imaging device according to an embodiment includes photoelectric conversion devices, a dopant layer, a low concentration region, and a transistor. The photoelectric conversion devices are disposed on a semiconductor layer. The dopant layer is disposed on a layer same as the semiconductor layer where photoelectric conversion devices are arrayed, and includes dopant having a conductivity type reverse to a charge accumulating region of the photoelectric conversion device. The low concentration region is disposed inside the dopant layer and has dopant concentration lower than the dopant layer. A transistor includes an active region disposed on the dopant layer.
Claims12
A solid-state imaging device comprising:
- a plurality of photoelectric conversion devices disposed on a semiconductor layer;
- a dopant layer disposed on the semiconductor layer where the photoelectric conversion devices are arrayed, and including dopant having conductivity type reverse to a charge accumulating region of the photoelectric conversion device;
- a low concentration region disposed inside the dopant layer, and having dopant concentration lower than the dopant layer;
- and
- an amplification transistor configured to amplify signal charges obtained by photoelectric conversion by the photoelectric conversion devices, and including an active region on the dopant layer.
A method of manufacturing a solid-state imaging device comprising:
- forming a plurality of photoelectric conversion devices on a semiconductor layer;
- forming a dopant layer on the semiconductor layer where the photoelectric conversion devices are arrayed, and the dopant layer including a dopant having conductivity type reverse to a charge accumulating region of the photoelectric conversion device;
- forming, inside the dopant layer, a low concentration region having dopant concentration lower than the dopant layer;
- and
- forming an active region of a transistor on the dopant layer, the transistor configured to amplify signal charges obtained by photoelectric conversion by the photoelectric conversion devices.
Dependencies are inferred from the claim text.