Semiconductor devices, methods of manufacturing thereof, and image sensor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Chieh Chuang, Dun-Nian Yaung, Jen-Cheng Liu, Tzu-Hsuan Hsu, Feng-Chi Hung, Min-Feng Kao
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Abstract
Semiconductor devices, methods of manufacturing thereof, and image sensor devices are disclosed. In some embodiments, a semiconductor device comprises a semiconductor chip comprising an array region, a periphery region, and a through-via disposed therein. The semiconductor device comprises a guard structure disposed in the semiconductor chip between the array region and the through-via or between the through-via and a portion of the periphery region.
Claims20
A semiconductor device, comprising:
- a semiconductor chip comprising an array region, a periphery region, and a through-via disposed in the semiconductor chip;
- and
- a guard structure disposed in the semiconductor chip between the array region and the through-via or between the through-via and a portion of the periphery region, the guard structure comprising a metal feature, a p-type region, and an n-type region, wherein a first insulating material is on sidewalls of the metal feature and a second insulating material is adjacent the p-type region and the n-type region.
A method of manufacturing a semiconductor device, the method comprising:
- providing a semiconductor chip comprising an array region, a periphery region, and a through-via disposed therein;
- and
- forming a guard structure in the semiconductor chip between the array region and the through-via or between the through-via and a portion of the periphery region, wherein forming the guard structure comprises:
- forming a trench in a first portion of the semiconductor chip;
- filling the trench with a conductive material;
- implanting a second portion of the semiconductor chip with an n-type impurity to form an n-type region;
- implanting a third portion of the semiconductor chip with a p-type impurity to form a p-type region;
- and
- forming shallow trench isolation regions in the semiconductor chip proximate the n-type region and the p-type region, the shallow trench isolation regions comprising an insulating material.
An image sensor device, comprising:
- a first semiconductor chip comprising an array region, a periphery region disposed around the array region, and a first through-via disposed between the array region and the periphery region;
- a second semiconductor chip bonded to the first semiconductor chip, the second semiconductor chip comprising a second through-via disposed therein, the second through-via also being disposed in the first semiconductor chip;
- and
- a guard structure disposed in the first semiconductor chip between the array region and the first through-via or the second through-via, or between a portion of the periphery region and the first through-via or the second through-via.
Dependencies are inferred from the claim text.