Back side illumination image sensor and manufacturing method thereof
AssigneeUnited Microelectronics Corp.
InventorChing-Hung Kao
Life of this patent
Estimating the term…
Abstract
A manufacturing method of a BSI image sensor includes providing a substrate having a plurality of photo-sensing elements and a plurality of multilevel interconnects formed on a first side of the substrate; forming a redistribution layer (RDL) and a first insulating layer covering the RDL on the front side of the substrate; providing a carrier wafer formed on the front side of the substrate; forming a color filter array (CFA) on a second side of the substrate, the second side being opposite to the first side; removing the carrier wafer; and forming a first opening in the first insulating layer for exposing the RDL.
Claims8
A manufacturing method of a back side illumination (BSI) image sensor, comprising:
- providing a substrate having a plurality of photo-sensing elements and a plurality of multilevel interconnects formed on a first side of the substrate;
- forming a bonding pad and a first insulating layer covering the bonding pad on the first side of the substrate;
- forming a redistribution layer (RDL) and a second insulating layer covering the RDL on the first insulating layer, the RDL being electrically connected to the bonding pad;
- providing a carrier wafer formed on the first side of the substrate after forming the RDL and the second insulating layer;
- performing a wafer thinning process to a second side of the substrate after providing the carrier wafer, the second side being opposite to the first side;
- forming a color filter array (CFA) on the second side of the substrate after performing the wafer thinning process;
- removing the carrier wafer;
- and
- forming a second opening in the second insulating layer on the first side of the substrate for exposing the RDL after removing the carrier wafer.
Dependencies are inferred from the claim text.