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US 9,312,291 B2Granted
Solid-state imaging device and method for manufacturing solid-state imaging device, and electronic device
AssigneeSony Corporation
InventorsKeiji Tatani, Fumihiko Koga, Takashi Nagano
Life of this patent
Estimating the term…
Abstract
A solid-state imaging device includes a first-conductivity-type semiconductor well region, a plurality of pixels each of which is formed on the semiconductor well region and is composed of a photoelectric conversion portion and a pixel transistor, an element isolation region provided between the pixels and in the pixels, and an element isolation region being free from an insulation film and being provided between desired pixel transistors.
Claims29
An imaging device comprising:
- a substrate;
- a semiconductor well region on the substrate which in plan view has a pixel region and a transistor
- region;
- a plurality of pixels in the pixel region, the plurality of pixels including a first set of pixels that share a first floating diffusion region and a second set of pixels that share a second floating diffusion region;
- a plurality of transistors in the transistor region, the plurality of transistors including a first set of transistors that are shared by the first set of pixels and a second set of transistors that are shared by the second set of pixels;
- an element isolation region in the transistor region including a shallow trench isolation (STI) structure;
- and
- a well contact region in the transistor region, the well contact region being structured to apply a voltage to the semiconductor region, wherein,
- the first set of pixels and the second set of pixels neighbor along a horizontal direction,
- the pixel region and the transistor region neighbor along a vertical direction,
- the first set of transistors include at least a first amplification transistor,
- the second set of transistors include at least a second amplification transistor,
- the well contact region is between the first amplification transistor and the second amplification transistor along the horizontal direction;
- wherein the plurality of pixels further include a third set of pixels that share a third floating diffusion region,
- wherein the third set of pixels is adjacent to the first set of pixels across the first set of transistors along the vertical direction.
12 more elements
An imaging device comprising:
- a substrate;
- a semiconductor well region on the substrate which in plan view has a first region and a second region,
- a plurality of photoelectric conversion units in the first region, the plurality of photoelectric conversion units include a first set of photoelectric conversion units that share a first floating diffusion region and a second set of photoelectric conversion units that share a second floating diffusion region;
- a plurality of transistors in the second region, the plurality of transistors including a first set of transistors that are shared by the first set of photoelectric conversion units and a second set of transistors that are shared by the second set of photoelectric conversion units;
- an element isolation region in the second region including a shallow trench isolation (STI) structure;
- and
- a well contact portion to apply a voltage to the semiconductor region, the well contact portion being in the second region,
- wherein,
- the first set of photoelectric conversion units and the second set of photoelectric conversion units neighbor along a first direction,
- the first and second regions neighbor along a second direction different than the first direction,
- the first set of transistors include at least first amplification transistor,
- the second set of transistors include at least a second amplification transistor,
- the well contact portion is in the second region and between the first amplification transistor and the second amplification transistor along the first direction;
- the plurality of photoelectric conversion units further include a third set of photoelectric conversion units that share a third floating diffusion region, wherein
- the third set of photoelectric conversion units is adjacent to the first set of photoelectric conversion units across the first set of transistors along the second direction.
12 more elements
Dependencies are inferred from the claim text.