Sensor and method for fabricating the same

A method for fabricating a sensor comprising:

• forming, on a base substrate, a pattern of a source electrode and a drain electrode, a pattern of a data line connected with the drain electrode, and a pattern of a receiving electrode connected with the source electrode, by using a first patterning process, wherein the source electrode and the drain electrode are disposed opposed to each other to form a channel;
• forming a pattern of photodiode disposed on the receiving electrode and a pattern of a transparent electrode disposed on the photodiode, by using a second patterning process;
• forming a pattern of an ohmic layer disposed on the source electrode and the drain electrode, by using a third patterning process;
• forming a pattern of an active layer which is disposed on the ohmic layer and overlays the channel, by using a fourth patterning process;
• forming a pattern of a gate insulating layer by using a fifth patterning process, wherein the gate insulating layer has a through hole over the transparent electrode;
• and
• forming a pattern of a gate electrode which is disposed on the gate insulating layer and over the channel, a pattern of a gate line connected with the gate electrode, and a pattern of a bias line connected with the transparent electrode via the through hole and over the transparent electrode, by using a sixth patterning process.

A method for fabricating a sensor comprising:

• forming, on a base substrate, a pattern of a bias electrode, a pattern of a bias electrode pin connected with the bias electrode, a pattern of a photodiode disposed on the bias electrode and a pattern of a transparent electrode disposed on the photodiode, by using a first patterning process;
• forming a pattern of a first passivation layer which is disposed on the transparent electrode and the bias electrode pin and overlays the base substrate, by using a second patterning process;
• forming a pattern of a source electrode, a drain electrode and a date line and a pattern of an ohmic layer disposed on the source electrode and the drain electrode, by using a third patterning process, wherein the source electrode and the drain electrode are disposed opposed to each other to form a channel, the drain electrode is connected with the data line, the source electrode is connected with the transparent electrode;
• forming a pattern of an active layer which is disposed on and overlays the channel, by using a fourth patterning process;
• forming a pattern of a gate insulating layer disposed on the active layer, a pattern of a gate electrode disposed on the gate insulating layer and over the channel, and a pattern of a gate line connected with the gate electrode, by using a fifth patterning process.