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US 9,312,275 B2Granted
FinFET with reduced capacitance
AssigneeInternational Business Machines Corporation
InventorsVeeraraghavan S. Basker, Kangguo Cheng, Ali Khakifirooz, Charles W. Koburger, III
Life of this patent
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Abstract
An finFET structure including a plurality of fins etched from a semiconductor substrate, a plurality of gates above and perpendicular to the plurality of fins, each comprising a pair of spacers on opposing sides of the gates, and a gap fill material above the semiconductor substrate, below the gate, and between the plurality of fins, wherein the gate separates the gap fill material from each of the plurality of fins.
Claims19
A structure comprising:
- a plurality of fins etched from a semiconductor substrate;
- a gate electrode above and perpendicular to the plurality of fins, a pair of spacers disposed on opposing sides of the gate electrode;
- and
- a gap fill material above the semiconductor substrate, directly below the gate electrode, and between the plurality of fins, wherein the gate electrode separates the gap fill material from each of the plurality of fins.
1 more element
A structure comprising:
- a gap fill material disposed between two semiconductor fins and above a semiconductor substrate, the gap fill material is separated from each of the two semiconductor fins by a distance;
- and
- a gate electrode disposed above and perpendicular to the two semiconductor fins, wherein a portion of the gate electrode is located between the gap fill material and each of the two semiconductor fins.
A structure comprising:
- a dummy gate oxide disposed between two semiconductor fins and directly on top of a semiconductor substrate, the dummy gate oxide is separated from each of the two semiconductor fins by a distance;
- a gap fill material above and in direct contact with the dummy gate oxide, the gap fill material is separated from each of the two semiconductor fins by the distance;
- a gate electrode disposed above and perpendicular to the two semiconductor fins,
- wherein a portion of the gate electrode is located between the dummy gate oxide and each of the two semiconductor fins, wherein the portion of the gate electrode is located between the gap fill material and each of the two semiconductor fins.
1 more element
Dependencies are inferred from the claim text.