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US 9,312,274 B1Granted
Merged fin structures for finFET devices
AssigneeGlobalfoundries Inc.
InventorsAndres Bryant, Brian J. Greene, Jeffrey B. Johnson, Mickey H. Yu
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Abstract
Merged fin structures for finFET devices and methods of manufacture are disclosed. The method of forming the structure includes forming a plurality of fin structures on an insulator layer. The method further includes forming a faceted structure on adjacent fin structures of the plurality of fin structures. The method further includes spanning a gap between the faceted structures on the adjacent fin structures with a semiconductor material.
Claims20
A method of forming a structure, comprising:
- forming a plurality of fin structures on an insulator layer;
- forming a faceted structure on adjacent fin structures of the plurality of fin structures, wherein adjacent faceted structures define a gap therebetween;
- spanning the gap between the adjacent faceted structures with a first semiconductor material;
- and
- forming a semiconductor cap material over the first semiconductor material to provide at least additional thickness over the gap thereby absorbing silicide thickness variations and providing a region to be recessed and then filled with silicide.
2 more elements
A method, comprising:
- forming a plurality of adjacent fin structures;
- merging the plurality of adjacent fin structures together comprising:
- forming faceted structures of semiconductor material on vertical sidewalls of the adjacent fin structures, wherein adjacent faceted structures define a gap therebetween;
- and
- forming a first semiconductor material on the adjacent faceted structures to fill the gap;
- and
- forming a semiconductor cap material over the first semiconductor material to provide at least additional thickness over the gap thereby absorbing silicide thickness variations and providing a region to be recessed and then filled with silicide.
4 more elements
A structure, comprising:
- one or more adjacent fin structures on a substrate;
- a faceted structure provided on the one or more adjacent fin structures, with a surface extending at an oblique angle relative to a vertical surface of the fin structures, wherein adjacent faceted structures define a gap therebetween;
- a first semiconductor material provided on a surface of the faceted structure and extending between and closing the gap of adjacent faceted structures;
- a semiconductor cap material provided over the first semiconductor material and over the closed gap;
- and
- a conductive region contacting the semiconductor cap material.
3 more elements
Dependencies are inferred from the claim text.