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US 9,312,271 B2Granted
Non-volatile memory device and method for manufacturing same
AssigneeKabushiki Kaisha Toshiba
InventorsKeiichi Sawa, Masayuki Tanaka, Katsuaki Natori
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AssigneeKabushiki Kaisha Toshiba
InventorsKeiichi Sawa, Masayuki Tanaka, Katsuaki Natori
Estimating the term…
According to an embodiment, a non-volatile memory device includes electrodes, an inter-layer insulating film between the electrodes and at least one semiconductor layer extending through the electrodes and the inter-layer insulating film. The device includes a charge storage layer between the semiconductor layer and each electrode, a first insulating film between the charge storage layer and the semiconductor layer, and a second insulating film. The second insulating film includes a first portion between the charge storage layer and each electrode, a second portion between each electrode and the inter-layer insulating film, and a third portion that links the first portion and the second portion. In a cross-section of the third portion parallel to the first direction and a second direction toward each electrode from the charge storage layer, a curved surface on the charge storage layer side has a curvature radius larger than a surface on the electrodes side.
A non-volatile memory device, comprising:
A non-volatile memory device, comprising:
A non-volatile memory device, comprising:
Dependencies are inferred from the claim text.