Methods of manufacturing three-dimensional semiconductor memory devices
AssigneeSamsung Electronics Co., Ltd.
InventorsKyung-Tae Jang, Myoungbum Lee, Seungmok Shin, JinGyun Kim, Yeon-Sil Sohn, Seung-Yup Lee, Dae-Hun Choi
Life of this patent
Estimating the term…
Abstract
Methods of manufacturing a three-dimensional semiconductor device are provided. The method includes: forming a thin film structure, where first and second material layers of at least 2n (n is an integer more than 2) are alternately and repeatedly stacked, on a substrate; wherein the first material layer applies a stress in a range of about 0.1×109 dyne/cm2 to about 10×109 dyne/cm2 to the substrate and the second material layer applies a stress in a range of about −0.1×109 dyne/cm2 to about −10×109 dyne/cm2 to the substrate.
Claims20
A method of manufacturing a three-dimensional device, the method comprising:
- loading a substrate into a single chamber;
- alternately and repeatedly depositing oxide layers having a compressive stress and sacrificial layers having a tensil stress on the substrate in the chamber,
- wherein depositing the oxide layers comprises using a gas mixture including a silicon source gas and a nitrous oxide (N2O);
- and
- unloading the substrate from the chamber.
A method of manufacturing a three-dimensional device, the method comprising:
- loading a substrate into a single chamber;
- depositing an oxide layer having a compressive stress on the substrate in the chamber;
- depositing a sacrificial layer having a tensile stress on the device in the chamber;
- alternatively repeating depositing the oxide layers having the compressive stress and sacrificial layers having the tensile stress on the substrate in the chamber;
- and
- unloading the substrate from the chamber.
A method of manufacturing a three-dimensional device, the method comprising:
- loading a substrate into a single chamber;
- alternately and repeatedly depositing oxide layers and sacrificial layers on the substrate in the chamber,
- wherein depositing the sacrificial layers comprises depositing first sacrificial layers having a compressive stress and depositing second sacrificial layers having a tensile stress;
- and
- unloading the substrate from the chamber.
Dependencies are inferred from the claim text.