Integrated circuits with FinFET nonvolatile memory

A method of producing an integrated circuit comprising:

• forming a first fin overlying a substrate, wherein the first fin extends in a first direction, and wherein the first fin comprises a first fin left end;
• forming a second fin overlying the substrate, wherein the second fin extends in a second direction different than the first direction, and wherein the second fin intersects the first fin at a fin intersection;
• forming a tunnel dielectric adjacent to the first fin;
• forming a floating gate adjacent to the first fin such that the tunnel dielectric is positioned between the floating gate and the first fin;
• forming an interpoly dielectric adjacent to the floating gate;
• forming a control gate adjacent to the interpoly dielectric such that the interpoly dielectric is positioned between the floating gate and the control gate;
• and
• removing the control gate, the interpoly dielectric, the floating gate, and the tunnel dielectric from over the first fin except for at a floating gate position, wherein the floating gate position is between the first fin left end and the fin intersection.