Static random access memory cell and forming method thereof
AssigneeShanghai Huadong Grace Semiconductor Manufacturing Corporation
InventorJian Hu
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Abstract
A SRAM cell and a forming method thereof are provided. The SRAM cell includes: a pull-up transistor, a pull-down transistor, a pass gate transistor, a tensile stress film which covers the pull-up transistor and the pull-down transistor, and an interlayer dielectric isolating layer which covers the tensile stress film and the pass gate transistor. The method includes: providing a semiconductor substrate; forming a pull-up transistor, a pull-down transistor and a pass gate transistor on the semiconductor substrate; forming a tensile stress film covering the pull-up and pull-down transistors; and forming an interlayer dielectric isolating layer covering the tensile stress film and the pass gate transistor. Write margin of the SRAM cell may be increased and an area of the SRAM cell may be reduced.
Claims10
A static random access memory (SRAM) cell, comprising:
- a pull-up transistor, a pull-down transistor, a pass gate transistor, a tensile stress film which covers the pull-up transistor and the pull-down transistor, and an interlayer dielectric isolating layer which covers the tensile stress film and the pass gate transistor;
- wherein the tensile stress film does not cover the pass gate transistor;
- and wherein the interlayer dielectric isolating layer is in contact with the pass gate transistor.
A method for forming a SRAM cell, comprising:
- providing a semiconductor substrate;
- forming a pull-up transistor, a pull-down transistor and a pass gate transistor on the semiconductor substrate;
- forming a tensile stress film covering the pull-up and pull-down transistors;
- forming an interlayer dielectric isolating layer covering the tensile stress film and the pass gate transistor;
- wherein the tensile stress film does not cover the pass gate transistor;
- and wherein the interlayer dielectric isolating layer is in contact with the pass gate transistor.
Dependencies are inferred from the claim text.