Integrated circuit structure with thinned contact

An integrated circuit (IC) structure, comprising:

• a substrate comprising a first diffusion region and a second diffusion region, wherein the first diffusion region and the second diffusion region are separated by an isolation structure;
• a gate structure formed over the substrate, wherein the gate structure extends from the first diffusion region to the second diffusion region across the isolation structure;
• a contact formed over the substrate, wherein the contact comprises a wide portion over the first diffusion region and the second diffusion region and a thin portion over the isolation structure, the wide portion and the thin portion join at a junction between the first diffusion region and the isolation structure, and a width of the wide portion at a junction between the first diffusion region and the isolation structure is larger than a width of the thin portion at the junction between the first diffusion region and the isolation structure;
• and
• a metal line formed over the gate structure over the isolation structure.

An integrated circuit (IC) structure, comprising:

• a substrate comprising a first diffusion region, a second diffusion region, and an isolation structure separating the first diffusion region and the second diffusion region;
• a gate structure formed over the substrate;
• and
• a contact formed over the substrate, wherein the contact comprises a wide portion and a thin portion, and a distance between the gate structure and the wide portion of the contact is less than a distance between the gate structure and the thin portion of the contact, the wide portion and the thin portion join at a junction between the first diffusion region and the isolation structure, and a width of the wide portion at a junction between the first diffusion region and the isolation structure is larger than a width of the thin portion at the junction between the first diffusion region and the isolation structure.