Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Kensuke Yoshizumi
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Abstract
A semiconductor device is described, which includes a first transistor, a second transistor, and a capacitor. The second transistor and the capacitor are provided over the first transistor so as to overlap with a gate of the first transistor. A semiconductor layer of the second transistor and a dielectric layer of the capacitor are directly connected to the gate of the first transistor. The second transistor is a vertical transistor, where its channel direction is perpendicular to an upper surface of a semiconductor layer of the first transistor.
Claims22
A semiconductor device comprising:
- a first transistor comprising a first semiconductor layer;
- and
- a second transistor being over and overlapping with the first transistor,
- wherein a channel length direction between source and drain regions of the second transistor is perpendicular to an upper surface of the first semiconductor layer.
A semiconductor device comprising:
- a first semiconductor layer;
- a first insulating layer over the first semiconductor layer;
- a first electrode layer over the first insulating layer;
- a second semiconductor layer over and in direct contact with the first electrode layer;
- a second insulating layer adjacent to a side surface of the second semiconductor layer;
- a second electrode layer adjacent to the side surface of the second semiconductor layer with the second insulating layer therebetween;
- and
- a third electrode layer over and in direct contact with the second semiconductor layer.
Dependencies are inferred from the claim text.