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US 9,312,256 B2Granted
Bidirectional silicon carbide transient voltage supression devices
AssigneeCree, Inc.
InventorsSarah Kay Haney, Sei-Hyung Ryu
Life of this patent
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Abstract
An electronic device includes a silicon carbide layer having a first conductivity type and having a first surface and a second surface opposite the first surface, and first and second silicon carbide Zener diodes on the silicon carbide layer. Each of the first and second silicon carbide Zener diodes may include a first heavily doped silicon carbide region having a second conductivity type opposite the first conductivity type on the silicon carbide layer, and an ohmic contact on the first heavily doped silicon carbide region.
Claims10
An electronic device, comprising:
- a silicon carbide layer having a first conductivity type and having a first surface and a second surface opposite the first surface;
- first and second silicon carbide Zener diodes on the silicon carbide layer, wherein each of the first and second silicon carbide Zener diodes comprises a heavily doped silicon carbide epitaxial layer having a second conductivity type opposite the first conductivity type, wherein each of the heavily doped epitaxial layers forms a Zener junction with the silicon carbide layer and wherein the silicon carbide layer provides a common reference for the first and second silicon carbide Zener diodes,
- first and second ohmic contacts, respectively, on the heavily doped silicon carbide epitaxial layers of the first and second silicon carbide Zener diodes opposite the silicon carbide layer;
- and
- a third ohmic contact on the silicon carbide layer, the third ohmic contact providing a reference contact on the silicon carbide layer for both the first and second silicon carbide Zener devices.
2 more elements
An electronic circuit, comprising:
- a silicon carbide metal oxide semiconductor field effect transistor (MOSFET) including a gate contact, a drain contact and a source contact;
- and
- a silicon carbide based bidirectional transient voltage suppressor (TVS) coupled between the gate and source contacts of the silicon carbide MOSFET, the silicon carbide based TVS including a silicon carbide layer having a first conductivity type and having a first surface and a second surface opposite the first surface, and first and second silicon carbide Zener diodes on the silicon carbide layer, wherein each of the first and second silicon carbide Zener diodes includes a heavily doped silicon carbide region having a second conductivity type opposite the first conductivity type on the silicon carbide layer wherein each of the heavily doped silicon carbide regions forms a Zener junction with the silicon carbide layer and wherein the silicon carbide layer provides a common reference for the first and second silicon carbide Zener diodes, first ohmic contacts on the heavily doped silicon carbide regions and a second ohmic contact on the silicon carbide layer, the second ohmic contact providing a reference contact on the silicon carbide layer for both the first and second silicon carbide Zener devices.
Dependencies are inferred from the claim text.