Heterogeneous integration of memory and split-architecture processor

A method for fabricating a semiconductor device comprising:

• providing a first chip having a first terminals;
• providing a second chip having second terminals;
• providing a third chip having third terminals;
• providing a first silicon interposer having first through silicon vias TSVs;
• providing a second silicon interposer having second TSVs;
• arraying the first TSVs in a first, a second, and a third set, wherein the first set is located in a first interposer region and matching the first terminals, the second set is located in a second interposer region and matching the second terminals, and the third set is located in a third interposer region between the first and second regions and matching the TSVs of the second interposer and the third terminals;
• aligning the first chip with the first set TSVs, the second chip with the second set TSVs, and the second interposer with the third set TSVs;
• giving the first silicon interposer a characteristic of a three-dimensional (3D) interposer by stacking the second silicon interposer on top of the first silicon interposer;
• and
• using a solder of a first melting temperature.