Semiconductor light emitting device
AssigneeSamsung Electronics Co., Ltd.
InventorsPun Jae . Choi, Sang Bum Lee, Jin Bock Lee, Yu Seung Kim, Sang Yeob Song
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AssigneeSamsung Electronics Co., Ltd.
InventorsPun Jae . Choi, Sang Bum Lee, Jin Bock Lee, Yu Seung Kim, Sang Yeob Song
Estimating the term…
In a semiconductor light emitting device, a light emitting structure includes a first-conductivity type semiconductor layer, an active layer, and a second-conductivity type semiconductor layer, which are sequentially formed on a conductive substrate. A second-conductivity type electrode includes a conductive via and an electrical connection part. The conductive via passes through the first-conductivity type semiconductor layer and the active layer, and is connected to the inside of the second-conductivity type semiconductor layer. The electrical connection part extends from the conductive via and is exposed to the outside of the light emitting structure. An insulator electrically separates the second-conductivity type electrode from the conductive substrate, the first-conductivity type semiconductor layer, and the active layer. A passivation layer is formed to cover at least a side surface of the active layer in the light emitting structure. An uneven structure is formed on a path of light emitted from the active layer.
A light emitting apparatus including a light emitting module, wherein the light emitting module comprises:
Dependencies are inferred from the claim text.