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US 9,312,241 B2Granted
Semiconductor device
AssigneeSK hynix Inc.
InventorSeiichi Aritome
Life of this patent
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Abstract
A semiconductor device includes an operation circuit formed on a top surface of a semiconductor substrate, a memory array formed over the operation circuit, an inner pad group formed on an intermediate layer between the operation circuit and the memory array and coupled to the operation circuit, a first outer pad group formed on a bottom surface of the semiconductor substrate, and a wiring structure passing through the semiconductor substrate, and coupling the inner pad group to the first outer pad group.
Claims18
A semiconductor device, comprising:
- an operation circuit formed over a top surface of a semiconductor substrate;
- a memory array formed over a top surface of the operation circuit;
- an inner pad group formed between the operation circuit and the memory array, and coupled to the operation circuit;
- a first outer pad group formed under a bottom surface of the semiconductor substrate so that the semiconductor substrate is located between the inner pad group and the first outer pad group;
- and
- a wiring structure passing through the semiconductor substrate, and coupling the inner pad group to the first outer pad group,
- wherein the wiring structure comprises:
- first plugs coupled to the inner pad group, and passing through the semiconductor substrate;
- multilayer metal lines formed under the bottom surface of the semiconductor substrate, and electrically connected to the first plugs, wherein the first outer pad group is coupled to an uppermost metal line among the multilayer metal lines;
- and
- a second outer pad group formed under the semiconductor substrate to establish an electrical connection to another semiconductor substrate, wherein the second outer pad group is electrically coupled to the first outer pad group.
8 more elements
A semiconductor device, comprising:
- a circuit board;
- semiconductor substrates each including an inner pad group, a memory array and an outer pad group, wherein the inner pad group and the memory array are sequentially stacked under each of bottom surfaces of the semiconductor substrates and the outer pad group is formed on each of top surfaces of the semiconductor substrates;
- wiring structures respectively formed in the semiconductor substrates, wherein each of the wiring structures passes through each of the semiconductor substrates to couple the inner pad group to the outer pad group;
- and
- connecting members each electrically coupling the circuit board to each of the outer pad group outside of the respective semiconductor substrates,
- wherein the semiconductor substrates are stacked on the circuit board.
3 more elements
A semiconductor device, comprising:
- a circuit board;
- semiconductor substrates stacked on the circuit board and each including an inner pad group, a memory array, and first and second pad groups, wherein the inner pad group and the memory array are sequentially stacked on each of the semiconductor substrates and first and second outer pad groups are electrically coupled to each other and are formed under each of the semiconductor substrates;
- wiring structures passing through the semiconductor substrates so that the inner pad group of each of the semiconductor substrates is coupled to the first outer pad group thereof, wherein each of the wiring structures is formed in each of the semiconductor substrates;
- and
- connecting members each electrically coupling the circuit board to the first outer pad group outside of the semiconductor substrates in odd layers,
- wherein the semiconductor substrates in even layers and the odd layers are alternately stacked on the circuit board, and the inner pad group or the first outer pad group each of the even and the odd layers face each other.
3 more elements
Dependencies are inferred from the claim text.