Semiconductor packages and methods of packaging semiconductor devices

A method of forming semiconductor assemblies comprising:

• providing an interposer with through interposer vias, the interposer comprises a first surface and a second surface, wherein
• the through interposer vias extend from the first surface to the second surface of the interposer,
• the first and second surfaces of the interposer comprise interposer contact pads thereon, the through interposer vias facilitate electrical coupling between the interposer contact pads on the first and second surfaces of the interposer, and
• the second surface of the interposer comprises interposer contacts disposed thereon, the interposer contacts are configured to facilitate electrical coupling between the interposer contact pads and an external device;
• mounting at least a first die on at least one die attach region on the first surface of the interposer, the first die comprises a first surface with first conductive contacts thereon, wherein the interposer comprises material with coefficient of thermal expansion (CTE) similar to that of the first die, the first conductive contacts of the first die are coupled to the through interposer vias on the first surface of the interposer;
• and
• performing a bonding process which does not require a reflow process to form connections between the first die and interposer, wherein the bonding process comprises a thermal compression bonding process which comprises
• aligning and contacting the first conductive contacts with the interposer contact pads,
• elevating a temperature to be above a melting point of material of the first conductive contacts, and
• applying a bond force to the first die to form an intermetallic bond between the first conductive contacts and the interposer contact pads.