Semiconductor device, wireless device, and storage device
AssigneeKabushiki Kaisha Toshiba
InventorsHidenori Okuni, Yukako Tsutsumi, Koji Akita
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Abstract
According to one embodiment, a semiconductor device includes a substrate, a first semiconductor chip, a second semiconductor chip, and a discrete element part. The first semiconductor chip is arranged on the substrate and includes a first electrode group. The second semiconductor chip is arranged on the substrate and includes a second electrode group, at least one of electrodes included in the second electrode group being connected to at least one of electrodes included in the first electrode group via at least one bonding wire. The discrete element part is arranged on the substrate and under the at least one bonding wire.
Claims20
A semiconductor device comprising:
- a substrate;
- a first semiconductor chip arranged on the substrate and comprising a first electrode group;
- a second semiconductor chip arranged on the substrate and comprising a second electrode group, at least one of electrodes included in the second electrode group being connected to at least one of electrodes included in the first electrode group via at least one bonding wire;
- and
- a discrete element part arranged on the substrate and under the at least one bonding wire,
- wherein:
- the discrete element part includes a first capacitor connected to one of a first power supply interconnection and a first ground interconnection, and a second capacitor connected to one of a second power supply interconnection and a second ground interconnection,
- the at least one bonding wire includes a first bonding wire and a second bonding wire,
- the first electrode group includes a first electrode, a second electrode, and a third electrode which are arranged on the first semiconductor chip in this order,
- the first electrode is connected to an end of the first bonding wire,
- the second electrode is connected to the one of the first power supply interconnection and the first ground interconnection,
- the third electrode is connected to an end of the second bonding wire,
- the second electrode group includes a fourth electrode, a fifth electrode, and a sixth electrode which are arranged on the second semiconductor chip in this order,
- the fourth electrode is connected to another end of the first bonding wire,
- the fifth electrode is connected to the one of the second power supply interconnection and the second ground interconnection,
- the sixth electrode is connected to another end of the second bonding wire, and
- the first capacitor is arranged under the first bonding wire, and the second capacitor is arranged under the second bonding wire.
A semiconductor device comprising:
- a substrate;
- a first semiconductor chip arranged on the substrate and comprising a first electrode group;
- a second semiconductor chip arranged on the substrate and comprising a second electrode group, at least one of electrodes included in the second electrode group being connected to at least one of electrodes included in the first electrode group via at least one bonding wire;
- and
- a discrete element part arranged on the substrate and under the at least one bonding wire,
- wherein:
- the discrete element part includes a first capacitor connected to one of a first power supply interconnection and a first ground interconnection, and a second capacitor connected to one of a second power supply interconnection and a second ground interconnection,
- the at least one bonding wire includes a first bonding wire and a second bonding wire which are configured to transmit a differential signal, and a third bonding wire and a fourth bonding wire which are configured to transmit a differential signal,
- the first electrode group includes a first electrode, a second electrode, a third electrode, a fourth electrode, and a fifth electrode which are arranged on the first semiconductor chip in this order,
- the first electrode is connected to an end of the first bonding wire,
- the second electrode is connected to an end of the second bonding wire,
- the third electrode is connected to the one of the first power supply interconnection and the first ground interconnection,
- the fourth electrode is connected to an end of the third bonding wire,
- the fifth electrode is connected to an end of the fourth bonding wire,
- the second electrode group includes a sixth electrode, a seventh electrode, an eighth electrode, a ninth electrode, and a tenth electrode which are arranged on the second semiconductor chip in this order,
- the sixth electrode is connected to another end of the first bonding wire,
- the seventh electrode is connected to another end of the second bonding wire,
- the eighth electrode is connected to the one of the second power supply interconnection and the second ground interconnection,
- the ninth electrode is connected to another end of the third bonding wire,
- the tenth electrode is connected to another end of the fourth bonding wire, and
- the first capacitor is arranged under the first bonding wire and the second bonding wire, and the second capacitor is arranged under the third bonding wire and the fourth bonding wire.
Dependencies are inferred from the claim text.