Semiconductor module and method for manufacturing the same

A semiconductor module comprising:

• a substrate made of metal;
• an insulating layer formed on the substrate;
• a plurality of wiring patterns formed on the insulating layer;
• a bare-chip transistor mounted on a first wiring pattern out of the plurality of wiring patterns via soldering;
• a copper connector constituted of a copper plate for jointing an electrode formed on a top surface of the bare-chip transistor and second wiring pattern out of the plurality of wiring patterns via soldering;
• and
• a packaged surface mounting device other than the bare-chip transistor mounted on a third wiring pattern out of the plurality of wiring patterns via soldering, the third wiring pattern being different from the first wiring pattern and the second wiring pattern;
• wherein the bare-chip transistor is a bare-chip FET having a source electrode and a gate electrode formed on a top surface thereof;
• wherein the copper connector includes a source electrode copper connector and a gate electrode copper connector;
• wherein the source electrode of the bare-chip FET and the second wiring pattern are jointed by the source electrode copper connector via soldering;
• wherein the gate electrode of the bare-chip FET and a fourth wiring pattern out of the plurality of wiring patterns is jointed by the gate electrode copper connector via soldering;
• wherein the gate electrode copper connector falls into one type, and the source electrode copper connector comprises one of two types, the two types including:
• a first source electrode copper connector arranged 180 degrees straightly with respect to the gate electrode copper connector, and a second source electrode copper connector arranged 90 degrees perpendicularly with respect to the gate electrode copper connector;
• and
• wherein the gate electrode copper connector and the source electrode copper connector are used in combination with each other on the same bare-chip FET.