Conductive pillar structure for semiconductor substrate and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Hua Chen, Chen-Shien Chen, Chen-Cheng Kuo
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Hua Chen, Chen-Shien Chen, Chen-Cheng Kuo
Estimating the term…
A conductive pillar structure for a die includes a passivation layer having a metal contact opening over a substrate. A bond pad has a first portion inside the metal contact opening and a second portion overlying the passivation layer. The second portion of the bond pad has a first width. A buffer layer over the bond pad has a pillar contact opening with a second width to expose a portion of the bond pad. A conductive pillar has a first portion inside the pillar contact opening and a second portion over the buffer layer. The second portion of the conductive pillar has a third width. A ratio of the second width to the first width is between about 0.35 and about 0.65. A ratio of the second width to the third width is between about 0.35 and about 0.65.
A semiconductor die comprising:
A semiconductor die comprising:
A method of forming a conductive pillar structure, said method comprising:
Dependencies are inferred from the claim text.