Patterning approach for improved via landing profile

A semiconductor structure, comprising:

• a first dielectric layer overlying a semiconductor body;
• a metal body residing in the first dielectric layer, the metal body having a first sidewall defining a first edge, and a second, opposing sidewall defining a second edge;
• a spacer element formed contiguous to the first edge of the metal body, and forming an interface thereat;
• a second dielectric layer overlying the first dielectric layer and having a conductive damascene structure having a bottom surface that overlies the interface, wherein the conductive damascene structure has a lower conductive portion which extends below an upper surface of the metal body and which makes conductive contact with an upper sidewall portion of the metal body;
• and
• a barrier layer disposed along the second sidewall of the metal body and along a lower surface of the metal body and terminating at the spacer element without extending along the first sidewall of the metal body.

A semiconductor structure, comprising:

• a first dielectric layer overlying a semiconductor body;
• a conductive body residing in the first dielectric layer, the conductive body having a first sidewall defining a first edge, and a second, opposing sidewall defining a second edge;
• a spacer element formed contiguous to the first edge of the conductive body, and forming an interface thereat;
• and
• a second dielectric layer overlying the first dielectric layer;
• a conductive via structure residing in the second dielectric layer and having a lower conductive surface that extends below an upper surface of the conductive body and that overlies the interface, wherein the lower conductive surface of the conductive via structure makes conductive contact with the conductive body;
• and
• a barrier layer disposed along the second sidewall of the conductive body and along a lower surface of the conductive body and terminating at the interface without extending along the first sidewall of the conductive body.