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US 9,312,214 B2Granted
Semiconductor packages having polymer-containing substrates and methods of forming same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMeng-Tse Chen, Chih-Wei Lin, Chun-Cheng Lin, Wen-Hsiung Lu, Ming-Da Cheng, Chung-Shi Liu
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Abstract
A method includes applying a polymer-comprising material over a carrier, and forming a via over the carrier. The via is located inside the polymer-comprising material, and substantially penetrates through the polymer-comprising material. A first redistribution line is formed on a first side of the polymer-comprising material. A second redistribution line is formed on a second side of the polymer-comprising material opposite to the first side. The first redistribution line is electrically coupled to the second redistribution line through the via.
Claims20
A method comprising:
- forming a first dielectric layer over a carrier, wherein no conductive features are attached to the carrier prior to forming the first dielectric layer;
- after forming the first dielectric layer, forming a first redistribution line extending through the first dielectric layer;
- applying a polymer-comprising material over the first dielectric layer and the carrier;
- forming a via over the carrier, wherein the via is located inside the polymer-comprising material, and substantially penetrates through the polymer-comprising material;
- forming a second redistribution line in a second dielectric layer over the polymer-comprising material and the carrier, and wherein the first redistribution line is electrically coupled to the second redistribution line through the via;
- and
- forming a third redistribution line over and electrically coupled to the first redistribution line, wherein the third redistribution line is located inside in the polymer-comprising material, and wherein a bottom surface of the third redistribution line is level with a bottom surface of the polymer-comprising material.
4 more elements
A method comprising:
- forming a first dielectric layer over a release layer, wherein the release layer is further located over a carrier;
- forming a first plurality of redistribution lines (RDLs) in the first dielectric layer using a damascene process, wherein the damascene process comprises:
- forming an opening through the first dielectric layer to expose the release layer;
- and
- filling the opening with a conductive material;
- forming a plurality of metal features over and electrically coupled to the first plurality of RDLs;
- forming a polymer-comprising material over the first dielectric layer, wherein the plurality of metal features is submerged in the polymer-comprising material;
- curing the polymer-comprising material to solidify the polymer-comprising material;
- performing a grinding to level top surfaces of the plurality of metal features and a top surface of the polymer-comprising material;
- and
- forming a second plurality of RDLs over and electrically coupled to the plurality of metal features using a damascene process.
8 more elements
A method comprising:
- forming a first redistribution line over a carrier;
- forming a polymer comprising material over the first redistribution line, wherein the polymer comprising material comprises silicon filler and a metal feature;
- forming a second redistribution line over the polymer comprising material, wherein the second redistribution line is electrically connected to the first redistribution line through the metal feature;
- forming a third redistribution line over and electrically coupled to the first redistribution line, wherein after the step of forming the polymer comprising material, the third redistribution line is submerged in the polymer comprising material, and wherein a bottom surface of the third redistribution line is level with a bottom surface of the polymer comprising material;
- bonding a die to the second redistribution line;
- and
- forming a solder ball adjacent the die and disposed on a fourth redistribution line, wherein top and bottom surfaces of the second and fourth redistribution lines are substantially level, and wherein the solder ball is at least as tall as the die.
4 more elements
Dependencies are inferred from the claim text.