Semiconductor device with air gap and method for fabricating the same
AssigneeSK hynix Inc.
InventorsHyo-Seok Lee, Seung-Jin Yeom
Life of this patent
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Abstract
A method for fabricating a semiconductor device includes forming, over a substrate, a plurality of first conductive structures which are separated from one another; forming multi-layered dielectric patterns including a first dielectric layer which covers upper ends and both sidewalls of the first conductive structures; removing portions of the first dielectric layer starting from lower end portions of the first conductive structures to define air gaps, and forming second conductive structures which are filled between the first conductive structures.
Claims14
A method for fabricating a semiconductor device, comprising:
- forming, over a substrate, a plurality of first conductive structures which are separated from one another;
- forming multi-layered dielectric patterns including a first dielectric layer which covers upper ends and both sidewalls of the first conductive structures;
- removing portions of the first dielectric layer starting from lower end portions of the first conductive structures to define air gaps;
- and
- forming second conductive structures which are filled between the first conductive structures.
A method for fabricating a semiconductor device, comprising:
- forming preliminary storage node contact plugs over a substrate;
- forming hard mask patterns over the preliminary storage node contact plugs;
- etching the preliminary storage node contact plugs using the hard mask patterns as an etch barrier, and forming storage node contact plugs which are separated from one another by a plurality of open parts;
- forming multi-layered dielectric patterns including a first dielectric layer which covers both sidewalls of the storage node contact plugs and upper ends and both sidewalls of the hard mask patterns;
- removing portions of the first dielectric layer starting from lower end portions of the storage node contact plugs to define air gaps;
- and
- filling bit lines in the open parts between the storage node contact plugs.
Dependencies are inferred from the claim text.