Dual damascene structure with liner
AssigneeGlobalfoundries Inc.
InventorsBaozhen Li, Chih-Chao Yang
Life of this patent
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Abstract
A dual damascene structure with an embedded liner and methods of manufacture are disclosed. The method includes forming a dual damascene structure in a substrate. The method further includes reflowing a seed layer such that material of the seed layer flows into a via of the dual damascene structure. The method further includes forming a liner material on the material over or within the via of the dual damascene structure. The method further includes filling any remaining portions of the via and a trench of the dual damascene structure with additional material.
Claims21
A method comprising:
- forming a dual damascene structure in a substrate;
- reflowing a seed layer such that material of the seed layer flows into a via of the dual damascene structure to form a via interconnect;
- selectively depositing a blocking liner material over a first portion of the material of the reflowed seed layer that is within the via of the dual damascene structure while a second portion of the material of the reflowed seed layer that is adjacent to but not within the via of the dual damascene structure is devoid of the blocking liner material, and which blocking liner material comprises a material having a thickness to prevent void formation in the via interconnect;
- and
- forming an additional material on the liner material which fills any remaining portions of the via and a trench of the dual damascene structure.
A method, comprising:
- forming a dual damascene structure in a single dielectric layer, comprising a via of a first cross section and a trench of a second cross section larger than the first cross section;
- lining the via and the trench with a liner and a first seed layer which extends on a surface of the single dielectric layer;
- reflowing the first seed layer such that it partially or completely fills the via to form a via interconnect;
- selectively forming a blocking liner directly over a first portion of the reflowed first seed layer which partially or completely fills the via while a second portion of the reflowed seed layer that is adjacent to but not within the via of the dual damascene structure is devoid of the blocking liner, and which blocking liner comprises a material having a thickness to prevent void formation in the via interconnect;
- and
- forming an additional material in the trench on the blocking liner and within any remaining portions of the via by an electroplating process on a copper seed layer.
A method, comprising:
- forming a dual damascene structure in a single dielectric layer, comprising a via of a first cross section and a trench of a second cross section larger than the first cross section;
- lining the via and the trench with a liner and a seed layer;
- reflowing the seed layer from a surface of the single dielectric layer and within the via and trench such that it partially or completely fills the via to form a via interconnect;
- forming a blocking liner over a first portion of the reflowed seed layer which partially or completely fills the via while a second portion of the reflowed seed layer that is adjacent to but not within the via of the dual damascene structure is devoid of the blocking liner, and which blocking liner comprises a material having a thickness to prevent void formation in the via interconnect;
- and
- forming an additional material in the trench on the blocking liner and the seed layer that remains in the trench.
Dependencies are inferred from the claim text.