Method of forming a semiconductor substrate including a cooling channel
AssigneeHamilton Sundstrand Corporation
InventorScott R. Bouras
Life of this patent
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Abstract
A semiconductor substrate for use in an integrated circuit, the semiconductor substrate including a channel defined on a surface of the substrate. The channel includes a first wall, a second wall, and a third wall. The first wall is recessed from the surface. The second wall extends from the surface to the first wall. The third wall extends from the surface to the first wall and faces the second wall across the channel. At least one of the second wall and the third wall includes a plurality of structures projecting into the channel from the second wall or the third wall.
Claims15
A method of forming a semiconductor substrate including a cooling channel, the method comprising:
- forming a trench in a surface of a first semiconductor wafer, the trench having a trench width;
- forming a first slot through a second semiconductor wafer, the first slot having a first slot width, the first slot width less than at least a portion of the trench width;
- forming a second slot through a third semiconductor wafer, the second slot having a second slot width, the second slot width greater than the first slot width;
- aligning the second semiconductor wafer to the first semiconductor wafer such that the first slot aligns with the trench;
- aligning the third semiconductor wafer to the second semiconductor wafer such that the second slot aligns with the first slot;
- and
- bonding the first semiconductor wafer, the second semiconductor wafer, and the third semiconductor wafer together to form the semiconductor substrate;
- wherein the trench, the first slot, and the second slot form walls of the cooling channel and edges of the first slot project into the cooling channel.
A method of producing an electronic device including a cooling channel, the method comprising:
- defining the cooling channel on a first surface of semiconductor substrate the cooling channel including:
- a first wall recessed from the first surface;
- a second wall extending from the first surface to the first wall;
- and
- a third wall extending from the first surface to the first wall, the third wall facing the second wall across the cooling channel;
- wherein at least one of the second wall and the third wall include a plurality of structures projecting into the cooling channel from the second wall or the third wall;
- and
- producing an integrated circuit at a second surface on a side of the substrate opposite the first surface upon which the cooling channel is defined.
Dependencies are inferred from the claim text.