Semiconductor device and method of manufacturing the same
AssigneesSK hynix Inc., Industry-University Cooperation Foundation Hanyang University
InventorChang-Hwan Choi
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Abstract
The present disclosure relates to a semiconductor device and a method of manufacturing the same. The semiconductor device may include a first metal gate electrode provided in a NMOS region of a substrate; and a second metal gate electrode provided in a PMOS region of the substrate, wherein the first and second metal gate electrodes may be formed of TiN material or TiAlN material. Here, the first metal gate electrode may have a higher titanium (Ti) content than the second metal gate electrode, and the second metal gate electrode may have a higher nitrogen (N) content than the first metal gate electrode.
Claims8
A method of manufacturing a semiconductor device, comprising:
- forming a first TiN layer in a PMOS of a substrate;
- forming an Al thin film over the first TiN layer in the PMOS region and in a NMOS region of the substrate;
- forming a second TiN layer over the Al thin film;
- forming each of a first and a second TiAlN layers in the NMOS region and the PMOS region by annealing the substrate on which the second TiN layer is formed;
- and
- forming a first metal gate electrode in the NMOS region and a second metal gate electrode in the PMOS region by patterning the first and the second TiAlN layers,
- wherein the first TiAlN layer and the second TiAiN layer have a different composition.
Dependencies are inferred from the claim text.