US 9,312,189 B2 · Methods for fabricating integrated circuits with improved implantation processes

Abstract

Methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a structure having an n-channel gate stack and a p-channel gate stack formed over a semiconductor substrate. The method includes forming halo implant regions in the semiconductor substrate adjacent the p-channel gate stack and forming extension implant regions in the semiconductor substrate adjacent the p-channel gate stack. The method further includes annealing the halo implant regions and the extension implant regions in the semiconductor substrate adjacent the p-channel gate stack by performing a laser anneal process. Also, the method forms extension implant regions in the semiconductor substrate adjacent the n-channel gate stack.

Claims15

Dependent claims

A method for fabricating an integrated circuit, the method comprising:

providing a semiconductor substrate with first gates overlying second conductive type regions in the semiconductor substrate and second gates overlying first conductive type regions in the semiconductor substrate;
performing a first ion implantation to form halo implant regions in the semiconductor substrate adjacent selected second gates;
after performing the first ion implantation, performing a second ion implantation to form halo implant regions in the semiconductor substrate adjacent selected first gates;
after performing the second ion implantation, performing a third ion implantation to form extension implant regions in the semiconductor substrate adjacent the selected first gates;
and
after performing the third ion implantation, performing a fourth ion implantation to form extension implant regions in the semiconductor substrate adjacent the selected second gates.

3 more elements

A method for fabricating an integrated circuit, the method comprising:

providing a structure having an n-channel gate stack and a p-channel gate stack formed over a semiconductor substrate;
performing an initial portion of a series of ion implantations to form an initial layer of pocket implants in the semiconductor substrate adjacent the n-channel gate stack;
performing a series of ion implantations to form a layer of pocket implants in the semiconductor substrate adjacent the p-channel gate stack;
annealing the layer of pocket implants in the semiconductor substrate adjacent the p-channel gate stack by performing a laser anneal process;
and
performing a final portion of a series of ion implantations to form a final layer of pocket implants in the semiconductor substrate adjacent the n-channel gate stack.

3 more elements

Dependencies are inferred from the claim text.

Methods for fabricating integrated circuits with improved implantation processes

Life of this patent

Methods for fabricating integrated circuits with improved implantation processes

Life of this patent

Abstract

Claims15