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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHuan-Chieh Su, Jui-Chien Huang, Chun-An Lin, Chien-Hsun Wang, Chun-Hsiung Lin
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This disclosure provides a horizontal structure by using a double STI recess method. The double STI recess method includes: forming a plurality of fins on the substrate; forming shallow trench isolation between the fins; performing first etch-back on the shallow trench isolation; forming source and drain regions adjacent to channels of the fins; and performing second etch-back on the shallow trench isolations to expose a lower portion of the fins as a larger process window for forming gates of the fins. Accordingly, compared to conventional methods limited by fin height from the STI, the double STI recess method provides greater fin height, which is a larger process window for HGAA nanowire formation, to easily produce multi-stack HGAA nanowires with high current density. The number of layers used in the multi-stack HGAA nanowires is not limited and may vary based on different designs.
A method of forming a semiconductor device having a horizontal gate all around structure on a substrate, the method comprising:
A method of forming a semiconductor device having a horizontal gate all around structure on a substrate, the method comprising:
A method of forming a semiconductor device having a horizontal gate all around structure on a substrate, the method comprising:
Dependencies are inferred from the claim text.