Semiconductor device, electronic device including the same and manufacturing methods thereof

A semiconductor device comprising:

• a plurality of fin-type active patterns protruding from a substrate, each of the fin-type active patterns having a rectangular shape extending in a first direction, and the fin-type active patterns spaced apart from each other in the first direction and a second direction perpendicular to the first direction;
• a device isolation pattern including a first device isolation region having a first thickness and a second device isolation region having a second thickness smaller than the first thickness, the first device isolation region disposed between the fin-type active patterns spaced apart from each other in the first direction, and the second device isolation region disposed between the fin-type active patterns spaced apart from each other in the second direction;
• a first gate structure extending in the second direction on the first device isolation region, the first gate structure including a first insulating pattern and a first gate electrode;
• a second gate structure extending in the second direction on the fin-type active patterns and the second device isolation region, the second gate structure including a second insulating pattern and a second gate electrode;
• and
• dopant patterns disposed on the fin-type active patterns at both sides of the second gate structure,
• wherein the thickness of the first gate electrode is substantially equal to the thickness of the second gate electrode disposed on the fin-type active pattern.

A method of manufacturing an electronic device, comprising steps of:

• forming a first mask pattern on a substrate;
• etching the substrate using the first mask pattern to form a trench;
• forming a preliminary device isolation pattern filling the trench and having a first and a second regions which have a first thickness;
• forming a second mask pattern on the first region and on a portion of the substrate adjacent to the first region;
• etching an upper portion of the second region and a portion of the first mask pattern, which are exposed by the second mask pattern, to form the second region having a second thickness smaller than the first thickness;
• etching the second region having the second thickness to form a third thickness smaller than the second thickness;
• removing the first and second mask patterns;
• etching an upper portion of the first region of the preliminary device isolation pattern to form a first device isolation region of the device isolation pattern;
• and
• etching an upper portion of the second region of the preliminary device isolation pattern to form a second device isolation region of the device isolation pattern,
• wherein a top surface of the first device isolation region of the device isolation pattern is at a different level from a top surface of the substrate adjacent to the first device isolation region.