Method for forming semiconductor structure
AssigneeUnited Microelectronics Corp.
InventorChin-Cheng Chien
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Abstract
The present invention provides a method for forming a semiconductor structure, including the following steps: Firstly, a substrate is provided, the substrate has a first region defined thereon, a plurality of fin structure is disposed within the first region, and an insulating layer is disposed on the substrate and between each fin structure; next, a first material layer is then formed on the insulating layer, and the fin structures is exposed simultaneously, afterwards, the fin structure is partially removed, and an epitaxial layer is then formed on the top surface of each remained fin structure.
Claims12
A method for forming a semiconductor structure, at least comprising the following steps:
- providing a substrate, a first region is defined on the substrate, and the first region comprises a plurality of fin structures, an insulating layer is disposed on the substrate and disposed between the fin structures;
- forming a first material layer on the insulating layer, and parts of the fin structures are exposed simultaneously;
- removing the fin structures partially;
- removing the first material layer completely;
- and
- forming an epitaxial layer on the top surface of each remained fin structure after the first material layer is removed completely.
Dependencies are inferred from the claim text.