Surface modified TSV structure and methods thereof
AssigneeInvensas Corporation
InventorsBelgacem Haba, Fatima Lina Ayatollahi, Michael Newman, Pezhman Monadgemi
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Abstract
Microelectronic elements and methods of their manufacture are disclosed. A microelectronic element may include a substrate including an opening extending through a semiconductor region of the substrate, a dielectric layer cover a wall of the opening within at least a first portion of the opening, a first metal disposed within the first portion of the opening, a second metal disposed within a second portion of the opening. The second metal may form at least part of a contact of the microelectronic element.
Claims16
A fabrication method for a microelectronic element, the method comprising:
- forming an opening extending from a first face of a substrate towards a second face of the substrate opposite thereto, wherein a wall of the opening includes a dielectric region;
- depositing a first metal within the opening so as to extend upwardly from a bottom of the opening towards the first face, wherein a portion of the dielectric region remains exposed within the opening after depositing the first metal;
- depositing a second metal within the opening, the second metal being different from the first metal;
- and
- abrading the substrate from the second face to expose the first metal.
A fabrication method for a microelectronic element, the method comprising:
- forming an opening extending from a first face of a substrate towards a second face of the substrate opposite thereto, wherein a wall of the opening includes a dielectric region;
- depositing a first metal within the opening so as to extend upwardly from a bottom of the opening towards the first face;
- depositing a second metal within the opening, the second metal being different from the first metal;
- and
- abrading the substrate from the second face and at least a portion of the first metal to expose the first metal, the abrading performed such that the second metal remains separated from the abraded second face of the substrate by at least the first metal;
- and
- wherein a portion of the dielectric region remains exposed within the opening after depositing the first metal.
A fabrication method for a microelectronic element, the method comprising:
- forming an opening extending from a first face of a substrate towards a second face of the substrate opposite thereto, wherein a wall of the opening includes a dielectric region, wherein the substrate includes a semiconductor region, and the forming of the opening includes forming the opening through at least a portion of the semiconductor region, and forming the dielectric region along an interior surface of the opening so as to define the wall of the opening;
- depositing a first metal within the opening so as to extend upwardly from a bottom of the opening towards the first face;
- depositing a second metal within the opening, the second metal being different from the first metal;
- and
- abrading the substrate from the second face and at least a portion of the first metal to expose the first metal, the abrading performed such that the second metal remains separated from the abraded second face of the substrate by at least the first metal;
- and
- wherein the depositing of the first metal is performed onto a surface of the semiconductor region exposed at least at the bottom of the opening.
Dependencies are inferred from the claim text.