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US 9,312,172 B2Granted
Semiconductor device and method for making same
AssigneeInfineon Technologies AG
InventorsDirk Meinhold, Heinrich Koerner, Wolfgang Dickenscheid
Life of this patent
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Abstract
One or more embodiments relate to a semiconductor device that includes: a conductive layer including a sidewall; a conductive capping layer disposed over the conductive layer and laterally extending beyond the sidewall of the conductive layer by a lateral overhang; and a conductive via in electrical contact with the conductive capping layer.
Claims3
A method for manufacturing a semiconductor device, the method comprising:
- forming a first conductive layer with a sidewall;
- forming a second conductive layer over the first conductive layer such that the second conductive layer has an overhang extending laterally beyond the sidewall of the first conductive layer;
- and
- forming a third conductive layer over the second conductive layer, the third conductive layer including a portion formed to a side of the first conductive layer, a dielectric material being between a portion of the third conductive layer and the sidewall, the dielectric material being part of an interlevel dielectric layer,
- wherein the overhang is at least partially formed by a wet etch.
2 more elements
A method for manufacturing a semiconductor device, the method comprising:
- forming a first conductive layer with a sidewall;
- forming a second conductive layer over the first conductive layer such that the second conductive layer has an overhang extending laterally beyond the sidewall of the first conductive layer;
- forming a third conductive layer over the second conductive layer, the third conductive layer including a portion formed to a side of the first conductive layer, a dielectric material being between a portion of the third conductive layer and the sidewall, the dielectric material being part of an interlevel dielectric layer;
- and
- forming a passivation layer along the sidewall of the first conductive layer.
2 more elements
Dependencies are inferred from the claim text.